Anisotropic shape of self-assembled InAs quantum dots: Refraction effect on spot shape of reflection high-energy electron diffraction

被引：43

作者：

Hanada, T ^{[1
]}

Koo, BH ^{[1
]}

Totsuka, H ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.64.165307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A significant role of refraction effect on reflection high-energy electron diffraction (RHEED) from nanostructures is demonstrated. It was found that the chevron-shape spots in RHEED patterns from self-assembled InAs/GaAs(001) and InAs/InAlAs/InP(001) quantum dots at [1 (1) over bar0] azimuth are well reproduced by kinematical calculations taking into account the refraction of electron beam at the curved surfaces of the dots. The dots must have (1 (1) over bar0) cross sections steeper than (110) cross sections and consequently extend along [1 (1) over bar0] since the refraction effects, considerable only at glancing incidence and departure, are invisible at [110] azimuth.

引用

页数：6

共 23 条

[21] Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dots [J].