Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures

被引：2

作者：

Podevin, F ^{[1
]}

Vanbésien, O ^{[1
]}

Lippens, D ^{[1
]}

机构：

[1] Univ Sci & Tech Lille Flandres Artois, Inst Elect & Microelect Nord, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.1359756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum calculations of the current-voltage characteristics of metal/wide-gap/narrow-gap semiconductor heterostructures have been performed in order to analyze the pure tunneling and thermally assisted current contributions. The InAlAs/InGaAs material system lattice matched to an InP substrate, with the InAlAs layer acting as a single semiconductor barrier, shows pronounced quantum size effects which yield resonant tunneling paths. On the basis of the nonlinear current-voltage characteristics, it is shown that an optimum barrier configuration can be found. Some consequences from the device viewpoint are finally discussed. (C) 2001 American Institute of Physics.

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页码：6247 / 6252

页数：6

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