ALD grown NbTaOx based MIM capacitors

被引：13

作者：

Blomberg, T. ^{[1
]}

Wenger, Ch ^{[2
]}

Kaynak, C. Baristiran ^{[2
]}

Ruhl, G. ^{[3
]}

Baumann, P. ^{[4
]}

机构：

[1] ASM Microchem Ltd, Helsinki 00560, Finland

[2] IHP, D-15236 Frankfurt, Germany

[3] Infineon Technol AG, D-93049 Regensburg, Germany

[4] AIXTRON AG, D-52134 Herzogenrath, Germany

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 08期

关键词：

MIM capacitor; High-k dielectric; NbTaOx; ATOMIC LAYER DEPOSITION; THIN-FILMS; NB2O5;

D O I：

10.1016/j.mee.2011.01.050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NbTaOx mixed oxides were deposited by ALD in ASM Pulsar (R) 2000 R&D reactor using TaF5 and NbF5 as metal precursors. Two deposition processes were evaluated, one with only H2O as the oxidizer, and the other with a combination of H2O and O-3. The depositions where done at 225 degrees C on Si (200 mm, p-type (1 0 0) with native oxide), Ru(AVD), TiN(ALD) and TaN(PVD) bottom electrodes. After the dielectric depositions, N-2 PDA's were applied on the samples and finally Au dot (e-beam evaporation with shadow mask) top electrodes were deposited for electrical characterization. Best electrical results (bottom electrode injection) achieved for the different stacks with similar to 45 nm thick NbTaOx films were: Ru(AVD) k = 17, 9 x 10(-11) A/cm(2) @ 3 V, TiN(ALD) k = 39,2 x 10(-2) A/cm(2) @ 3 V, TaN(PVD) k = 44, 7 x 10(-4) A/cm(2) @ 3 V. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2447 / 2451

页数：5

共 6 条

[1] Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O [J].