Etching of Nb2O5 Thin Films by NbCl5

被引：26

作者：

Knapas, Kjell ^{[1
]}

Rahtu, Antti ^{[1
]}

Ritala, Mikko ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland

来源：

CHEMICAL VAPOR DEPOSITION | 2009年 / 15卷 / 10-12期

基金：

芬兰科学院;

关键词：

Etching; In-situ; Mass spectrometry; Niobium oxide; QCM; ATOMIC LAYER DEPOSITION; OXIDE-FILMS; DIELECTRIC-PROPERTIES; EPITAXY; MECHANISM; CERAMICS; HUMIDITY; GROWTH; SENSOR; OXYGEN;

D O I：

10.1002/cvde.200906795

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Atomic layer deposition (ALD) of Nb2O5 from NbCl5 has earlier been found to produce highly non-uniform films. This was suspected to be due to etching of Nb2O5 by NbCl5. In this work the effect of NbCl5 vapor on Nb2O5 thin films is studied with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM) in-situ in an ALD reactor. Nb2O5 is deposited from Nb(OEt)(5) and water in the sarne reactor. NbCl5 is found to etch the Nb2O5 film producing volatile NbOCl3. The results are compared with thermodynamic data. Furthermore, the deposition of Nb2O5 using in-situ-generated NbOCl3 as the niobium source is considered.

引用

页码：269 / 273

页数：5

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