High frequency operation of nanoelectronic Y-branch at room temperature

被引：11

作者：

Worschech, L ^{[1
]}

Fischer, F

Forchel, A

Kamp, M

Schweizer, H

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Univ Stuttgart, Inst Phys, D-70550 Stuttgart, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 8B期

关键词：

nanoelectronic; Y-branches; rectification; high frequency; HF; second harmonic; room temperature;

D O I：

10.1143/JJAP.40.L867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoelectronic Y-branches have been fabricated using electron beam lithography and wet etching on modulation doped GaAs/AlGaAs heterostructures. The Output voltage Of the devices measured at the stein shows clear rectification characteristics as the input voltage of one branch is varied. The high frequency properties of rectification are investigated at room temperature. The second harmonic of a microwave injected into the right branch is observed at the stem up to 20 GHz.

引用

页码：L867 / L868

页数：2