E-band 85-mW Oscillator and 1.3-W Amplifier ICs using 0.12-μm GaN HEMTs for Millimeter-wave Transceivers

被引：42

作者：

Nakasha, Yasuhiro ^{[1
]}

Masuda, Satoshi ^{[1
]}

Makiyama, Kozo ^{[1
]}

Ohki, Toshihiro ^{[1
]}

Kanamura, Masahito ^{[1
]}

Okamoto, Naoya ^{[1
]}

Tajima, Tatsuhiko ^{[1
]}

Seino, Takehiro ^{[1
]}

Shigematsu, Hisao ^{[1
]}

Imanishi, Kenji ^{[1
]}

Kikkawa, Toshihide ^{[1
]}

Joshin, Kazukiyo ^{[1
]}

Hara, Naoki ^{[2
]}

机构：

[1] Fujitsu Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2010年

关键词：

D O I：

10.1109/csics.2010.5619643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents two oscillators (OSCs) and a high power amplifier (PA) for millimeter-wave transceivers. The circuits were designed with a grounded coplanar waveguide (GCPW) and 0.12-mu m GaN HEMT technology. One OSC, which was based on a simple series source feedback topology, oscillated at a frequency of 74.5 GHz with an output power of 2.2 mW (3.38 dBm). This oscillation frequency was the highest ever reported for GaN HEMT OSCs. Another OSC with a buffer delivered a record power of 85 mW (19.28 dBm) at 70.75 GHz. In addition, a single-chip PA with a 3-stage common source scheme delivered an output power of 1.3 W (31.13 dBm) at 75 GHz with a CW source module. The 3-dB bandwidth of the PA was 13 GHz from 67 to 80 GHz. The performance of these devices is sufficient for use in E-band fixed wireless access systems and automotive radar systems. The results demonstrate that the GaN HEMTs represent a feasible means of addressing the stringent demands imposed by various millimeter-wave applications.

引用

页数：4

共 12 条

[1]

Chen Y. C., 1999, IEEE MTT S INT MICR, P149

[2] A 427 mW, 20 % compact W-band InPHEMT MMIC power amplifier [J].

Ingram, DL ;

Chen, YC ;

Kraus, J ;

Brunner, B ;

Allen, B ;

Yen, HC ;

Lau, KF .

1999 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM - DIGEST OF PAPERS, 1999, :95-98

[3]

Kikkawa T, 2007, IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2007 IEEE CSIC SYMPOSIUM, TECHNOLOGY DIGEST, P32

[4]

Kikkawa T, 2002, IEEE MTT S INT MICR, P1815, DOI 10.1109/MWSYM.2002.1012215

[5] A V-band monolithic AlGaN/GaN VCO [J].

Lan, X. ;

Wojtowicz, M. ;

Truong, M. ;

Fong, F. ;

Kintis, M. ;

Heying, B. ;

Smorchkova, L. ;

Chen, Y. C. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2008, 18 (06) :407-409

[6] A Q-band low-phase noise monolithic AlGaN/GaN HEMT VCO [J].

Lan, X. ;

Wojtowicz, M. ;

Smorchkova, I. ;

Coffie, R. ;

Tsai, R. ;

Heying, B. ;

Truong, M. ;

Fong, F. ;

Kintis, M. ;

Namba, C. ;

Oki, A. ;

Wong, T. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (07) :425-427

[7]

MAKIYAMA K, 2008, INT WORKSH NITR SEM, P288

[8] High-fmax GaNHEMT with high breakdown voltage over 100 V for millimeter-wave applications [J].

Makiyama, Kozo ;

Ohki, Toshihiro ;

Kanamura, Masahito ;

Imanishi, Kenji ;

Hara, Naoki ;

Kikkawa, Toshihide .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :2054-2058

[9]

Masuda S, 2009, 2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, P1796

[10]

Micovic M, 2010, IEEE MTT S INT MICR, P237, DOI 10.1109/MWSYM.2010.5516911

← 1 2 →