High-fmax GaNHEMT with high breakdown voltage over 100 V for millimeter-wave applications

被引：13

作者：

Makiyama, Kozo

Ohki, Toshihiro

Kanamura, Masahito

Imanishi, Kenji

Hara, Naoki

Kikkawa, Toshihide

机构：

[1] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 06期

关键词：

D O I：

10.1002/pssa.200674881

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper discusses the technology of state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) used for millimeter-wave amplifiers. A high maximum frequency of oscillation (f(max)) device with high breakdown voltage (BVgd) was focused on to improve the gain and efficiency of a millimeter-wave amplifier. In this study, we demonstrated a high f(max) of 210 GHz with a BVgd of over 100 V using a novel Y-shaped Schottky-gate and GaN-cap structure, for the first time. The effect of the AlGaN layer and the device dimensions were investigated to obtain a highly reliable millimeter-wave power amplifier. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2054 / 2058

页数：5

共 7 条

[1] 30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs [J].