AlGaN/GaN HEMTs on SiC with fT of over 120-GHz

被引：200

作者：

Kumar, V ^{[1
]}

Lu, W

Schwindt, R

Kuliev, A

Simin, G

Yang, J

Khan, MA

Adesida, I

机构：

[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[3] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 08期

关键词：

GaN; high electron mobility transistors (HEMTs); SiC;

D O I：

10.1109/LED.2002.801303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating Sic substrates with a 0.12 mum gate length have been fabricated. These 0.12-mum gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (f(T)) of 121 GHz and maximum frequency of oscillation (f(max)) of 162 GHz were measured on these devices. These f(T) and f(max) values are the highest ever reported values for GaN-based HEMTs.

引用

页码：455 / 457

页数：3

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