Back-illuminated CCDs made by gas immersion laser doping

被引:9
作者
vandenBerg, ML [1 ]
denBoggende, AJF [1 ]
Bootsma, TMV [1 ]
denHerder, JW [1 ]
Jansen, FA [1 ]
deKorte, PAJ [1 ]
vanZwet, EJ [1 ]
Eaton, T [1 ]
Ginige, R [1 ]
机构
[1] EEV LTD,CHELMSFORD CM10 2QU,ESSEX,ENGLAND
关键词
D O I
10.1016/0168-9002(95)01401-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Back-illuminated CCDs with high quantum efficiency in the soft X-ray range have been developed by EEV in collaboration with the Space Research Organisation Netherlands. By using Gas Immersion Laser Doping (GILD) for producing the backside accumulation layer very shallow doping profiles can easily be achieved. Additionally the GILD process does not affect the silicon behind the p(+) layer in contrast to the commonly used ion implantation process. This implies that only the electrons generated in, or reaching the very small accumulation layer will have a probability to recombine at the surface or in the accumulation layer itself. Therefore only a small fraction of the electron clouds produced by the absorbed soft X-rays will suffer charge loss, resulting in a high quantum efficiency. X-ray measurements of back-illuminated CCDs with doping profiles of 50 and 100 nm depth are presented and shown to be consistent with calculations based on minority carrier transport.
引用
收藏
页码:312 / 319
页数:8
相关论文
共 18 条
[1]  
BAILEY P, 1990, P SOC PHOTO-OPT INS, V1344, P356, DOI 10.1117/12.23264
[2]   X-RAY-FLUORESCENCE YIELDS, AUGER, AND COSTER-KRONIG TRANSITION PROBABILITIES [J].
BAMBYNEK, W ;
SWIFT, CD ;
CRASEMANN, B ;
FREND, HU ;
RAO, PV ;
PRICE, RE ;
MARK, H ;
FINK, RW .
REVIEWS OF MODERN PHYSICS, 1972, 44 (04) :716-+
[3]  
BLEEKER JAM, 1987, HOT THIN PLASMAS AST
[4]   Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers [J].
Blood, P .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) :7-27
[5]  
BRINKMAN AC, 1989, P SOC PHOTO-OPT INS, V1159, P495
[6]   ULTRA-SHALLOW HIGH-CONCENTRATION BORON PROFILES FOR CMOS PROCESSING [J].
CAREY, PG ;
SIGMON, TW ;
PRESS, RL ;
FAHLEN, TS .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :291-293
[7]  
CUEVAS A, 1989, IEEE T ELECTRON DEV, V36, P353
[8]   TRANSMISSION, ENERGY-DISTRIBUTION, AND SE EXCITATION OF FAST ELECTRONS IN THIN SOLID FILMS [J].
FITTING, HJ .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :525-535
[9]   THE X-RAY-ENERGY RESPONSE OF SILICON .A. THEORY [J].
FRASER, GW ;
ABBEY, AF ;
HOLLAND, A ;
MCCARTHY, K ;
OWENS, A ;
WELLS, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 350 (1-2) :368-378
[10]  
HOLLAND AD, 1993, P SOC PHOTO-OPT INS, V2006, P2, DOI 10.1117/12.162820