A fully-monolithic sige differential voltage-controlled oscillator for 5 GHz wireless applications

被引：49

作者：

Plouchart, JO ^{[1
]}

Ainspan, H ^{[1
]}

Soyuer, M ^{[1
]}

Ruehli, A ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/RFIC.2000.854416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated and differential SiGe VCOs was designed for 5 GHz wireless applications. The measured phase noise is -98 dBc/Hz at 100 kHz offset off the 5 GHz carrier. It has a tuning range of 12.3% with a control voltage from 0 to 3V, and a figure of merit of more than -180 dBc/Hz. The current drawn from 3V is 5 mA for the core and 2.2 mA for the output buffers.

引用

页码：57 / 60

页数：4

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