Plasma molding over deep trenches and the resulting ion and energetic neutral distributions

被引:14
作者
Kim, D [1 ]
Economou, DJ [1 ]
机构
[1] Univ Houston, Plasma Proc Lab, Dept Chem Engn, Houston, TX 77204 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 04期
关键词
D O I
10.1116/1.1574049
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A two-dimensional fluid/Monte Carlo simulation was developed to study plasma molding over deep trenches and the resulting ion and energetic (fast) neutral distributions, with emphasis on neutral beam sources. Plasma molding occurs when the sheath thickness is comparable to or smaller than the trench width. Using the electric field profiles predicted by the self-consistent fluid simulation, ions and energetic neutrals (resulting mainly by ion neutralization on the sidewall) were followed by the Monte Carlo simulation. The dominant energetic species at the bottom of a high aspect ratio trench were neutrals. A thin sheath (compared to the trench width), favored a larger energetic neutral flux at the bottom, at the expense of neutral energy and directionality. A relatively thick sheath produced neutrals of higher directionality at the expense of neutral flux. Neutral energy and directionality both increased by increasing the sheath potential. (C) 2003 American Vacuum Society.
引用
收藏
页码:1248 / 1253
页数:6
相关论文
共 21 条
[1]   PARTICLE-IN-CELL CHARGED-PARTICLE SIMULATIONS, PLUS MONTE-CARLO COLLISIONS WITH NEUTRAL ATOMS, PIC-MCC [J].
BIRDSALL, CK .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1991, 19 (02) :65-85
[2]   FLUX-CORRECTED TRANSPORT .1. SHASTA, A FLUID TRANSPORT ALGORITHM THAT WORKS [J].
BORIS, JP ;
BOOK, DL .
JOURNAL OF COMPUTATIONAL PHYSICS, 1973, 11 (01) :38-69
[3]   Discharge from hot CaO. [J].
Child, CD .
PHYSICAL REVIEW, 1911, 32 (05) :0492-0511
[4]   INTERACTIONS OF LOW-ENERGY (10-600 EV) NOBLE-GAS IONS WITH A GRAPHITE SURFACE - SURFACE PENETRATION, TRAPPING AND SELF-SPUTTERING BEHAVIORS [J].
CHOI, W ;
KIM, C ;
KANG, H .
SURFACE SCIENCE, 1993, 281 (03) :323-335
[5]   Molecular dynamics simulations of Ar+ and Cl+ impacts onto silicon surfaces:: Distributions of reflected energies and angles [J].
Helmer, BA ;
Graves, DB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (06) :3502-3514
[6]   Aspect-ratio-dependent charging in high-density plasmas [J].
Hwang, GS ;
Giapis, KP .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :566-571
[7]   Gas-surface dynamics and profile evolution during etching of silicon [J].
Hwang, GS ;
Anderson, CM ;
Gordon, MJ ;
Moore, TA ;
Minton, TK ;
Giapis, KP .
PHYSICAL REVIEW LETTERS, 1996, 77 (14) :3049-3052
[8]   INTERACTION OF LOW-ENERGY REACTIVE IONS WITH SURFACES .3. SCATTERING OF 30-200 EV NE+, O+, C+, AND CO+ FROM NI(111) [J].
KASI, SR ;
KILBURN, MA ;
KANG, H ;
RABALAIS, JW ;
TAVERNINI, L ;
HOCHMANN, P .
JOURNAL OF CHEMICAL PHYSICS, 1988, 88 (09) :5902-5913
[9]   Plasma molding over surface topography: Simulation of ion flow, and energy and angular distributions over steps in RF high-density plasmas [J].
Kim, D ;
Economou, DJ .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2002, 30 (05) :2048-2058
[10]  
KIM D, IN PRESS IEEE T PLAS