Gas-surface dynamics and profile evolution during etching of silicon

被引：70

作者：

Hwang, GS ^{[1
]}

Anderson, CM ^{[1
]}

Gordon, MJ ^{[1
]}

Moore, TA ^{[1
]}

Minton, TK ^{[1
]}

Giapis, KP ^{[1
]}

机构：

[1] MONTANA STATE UNIV,DEPT CHEM & BIOCHEM,BOZEMAN,MT 59717

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.77.3049

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is used in a Monte Carlo simulation of topography evolution during neutral beam etching of Si. Model predictions of profile phenomena are validated by experiments.

引用

页码：3049 / 3052

页数：4

共 18 条

[1] SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE [J].

BAILEY, AD ;

VANDESANDEN, MCM ;

GREGUS, JA ;

GOTTSCHO, RA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (01) :92-104

[2] COLLISION-INDUCED DESORPTION OF PHYSISORBED CH4 FROM NI(111) - EXPERIMENTS AND SIMULATIONS [J].

BECKERLE, JD ;

JOHNSON, AD ;

CEYER, ST .

JOURNAL OF CHEMICAL PHYSICS, 1990, 93 (06) :4047-4065

[3] INTERACTIONS OF LOW-ENERGY (10-600 EV) NOBLE-GAS IONS WITH A GRAPHITE SURFACE - SURFACE PENETRATION, TRAPPING AND SELF-SPUTTERING BEHAVIORS [J].

CHOI, W ;

KIM, C ;

KANG, H .

SURFACE SCIENCE, 1993, 281 (03) :323-335

[4] MICROTRENCH FORMATION IN POLYSILICON PLASMA-ETCHING OVER THIN GATE OXIDE [J].

DALTON, TJ ;

ARNOLD, JC ;

SAWIN, HH ;

SWAN, S ;

CORLISS, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (08) :2395-2401

[5] 2-DIMENSIONAL IMPLICATIONS OF A PURELY REACTIVE MODEL FOR PLASMA-ETCHING [J].

GERODOLLE, AF ;

PELLETIER, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (09) :2025-2032

[6] HYPERTHERMAL NEUTRAL BEAM ETCHING [J].

GIAPIS, KP ;

MOORE, TA ;

MINTON, TK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :959-965

[7] MICROSCOPIC UNIFORMITY IN PLASMA-ETCHING [J].

GOTTSCHO, RA ;

JURGENSEN, CW ;

VITKAVAGE, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05) :2133-2147

[8]

HARRIS J, 1991, DYNAMICS GAS SURFACE, P17

[9]

HWANG GS, IN PRESS

[10] XEF2 ETCHING OF SI(111) - THE GEOMETRIC STRUCTURE OF THE REACTION LAYER [J].

LO, CW ;

SHUH, DK ;

CHAKARIAN, V ;

DURBIN, TD ;

VAREKAMP, PR ;

YARMOFF, JA .

PHYSICAL REVIEW B, 1993, 47 (23) :15648-15659

← 1 2 →