SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE

被引：71

作者：

BAILEY, AD ^{[1
]}

VANDESANDEN, MCM ^{[1
]}

GREGUS, JA ^{[1
]}

GOTTSCHO, RA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.587992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of Si and GaAs trench rates on aspect ratio, french width and substrate temperature was investigated under constant Ar/Cl2 electron cyclotron resonance plasma conditions. Results showed that at higher substrate temperature, etching rates for both Si and GaAs scaled only with aspect ratio. At lower temperature (-45°C), etching rates scaled with both aspect ratio and trench width. The dependence of Si etch rate on feature dimension, however, was stronger than that of GaAs.

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页码：92 / 104

页数：13

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