LOW-TEMPERATURE ETCHING OF 0.2 MU-M A1 PATTERNS USING A SIO2-MASK

被引：11

作者：

AOKI, H

HASHIMOTO, T

IKAWA, E

KIKKAWA, T

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Kanagawa, 229

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

DRY ETCHING; AL INTERCONNECTION; LOW-TEMPERATURE ETCHING; DRAM; SIO2-MASK; MICROLOADING EFFECT; CRITICAL DIMENSION SHIFT;

D O I：

10.1143/JJAP.31.4376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of etching temperature and gases on the microloading and critical dimension (CD) shifts are investigated for Al etching using a SiO2 mask. Al etching with a SiO2 mask using Cl2 gas at low temperature achieved etching resistance against the mask, selective Al etching of underlying SiO2, suppression of microloading, CD shift, and after-corrosion. Al etching of 0.2 mum was successfully achieved by using the SiO2 mask and Cl2 gas chemistry at low temperature.

引用

页码：4376 / 4380

页数：5