AFTER-CORROSION SUPPRESSION USING LOW-TEMPERATURE AL-SI-CU ETCHING

被引:5
作者
AOKI, H [1 ]
IKAWA, E [1 ]
KIKKAWA, T [1 ]
TERAOKA, Y [1 ]
NISHIYAMA, I [1 ]
机构
[1] NEC CORP LTD,OPTOELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期
关键词
AFTER-CORROSION; THERMAL DESORPTION SPECTROSCOPY; LOW-TEMPERATURE ETCHING; CHLORINE ADSORPTION; AL-SI-CU ETCHING;
D O I
10.1143/JJAP.30.1567
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors investigated the low-temperature etching effect on Al-Si-Cu after-corrosion. The after-corrosion extent was evaluated from the corrosion point density generated on the rinsed Al-Si-Cu stripes after dry etching. As the etching temperature was reduced, after-corrosion was suppressed. In order to study the low-temperature etching effect, the authors analyzed the Cl compounds remaining on the Al-Si-Cu film by thermal desorption spectroscopy (TDS). TDS revealed that the Cl concentration remaining on the Al-Si-Cu film etched at -60-degrees-C after rinsing in water was smaller than that remaining on the film etched at 30-degrees-C. Consequently, suppression of after-corrosion by low temperature etching could be attributed to the smaller number of Al-Cu bonds remaining in the Al-Si-Cu etch surface after removal of the AlCl(x) layer by rinsing with water. This fact is due to the reduction of chemical reaction and diffusion rate by lowering the substrate temperature.
引用
收藏
页码:1567 / 1570
页数:4
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