MOLECULAR LAYER ETCHING OF GAAS

被引：57

作者：

AOYAGI, Y

SHINMURA, K

KAWASAKI, K

TANAKA, T

GAMO, K

NAMBA, S

NAKAMOTO, I

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

[2] ISHIKAWAJIMA HARIMA HEAVY IND CO LTD,KOTO KU,TOKYO 135,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.106477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Layer-by-layer controlled molecular layer self-limiting etching at one molecular layer of GaAs was successfully achieved for the first time by alternatively feeding an etchant of Cl and applying a low energy Ar ion beam to the GaAs substrate. The etching rate saturates exactly at one molecular layer per cycle and is independent of etchant feeding rate and the energetic ion beam flux.

引用

页码：968 / 970

页数：3

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