2-DIMENSIONAL IMPLICATIONS OF A PURELY REACTIVE MODEL FOR PLASMA-ETCHING

被引：25

作者：

GERODOLLE, AF ^{[1
]}

PELLETIER, J ^{[1
]}

机构：

[1] UNIV JOSEPH FOURIER,CTR NATL ETUD TELECOMMUN,DEPT INTERACT PLASMA SURFACE,CNRS,URA D0844,F-38243 MEYLAN,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 09期

关键词：

D O I：

10.1109/16.83725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for plasma etching of silicon by SF6 at low ion energy is presented. It is shown how this model, which excludes sputtering effects, allows the simulation of most observed two-dimensional effects (dovetail, field effect, barreling, trench bowing). Ion scattering is ignored and only the equilibrium between adsorption, desorption, and surface diffusion is computed, leading to a differential equation with only three independent parameters. The influence of these parameters on trench shapes is discussed. The role of adspecies diffusion on surfaces is emphasized and the possible extension to materials other than silicon and to other process conditions is considered.

引用

页码：2025 / 2032

页数：8

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