THE ETCHING OF SILICON IN DILUTED SF6 PLASMAS - CORRELATION BETWEEN THE FLUX OF INCIDENT SPECIES AND THE ETCHING KINETICS

被引：38

作者：

MAHI, B

ARNAL, Y

POMOT, C

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：657 / 666

页数：10

共 20 条

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[5] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES
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[6] DAGOSTINO R, 1981, PLASMA CHEM PLASMA P, V1, P365
[7] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 242 - 252
[8] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[9] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION
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[J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188
[10] MECHANISM OF SILICON ETCHING BY A CF4 PLASMA
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05): : 1734 - 1738

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