A GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .2. APPLICATION TO DEPOSITION AND ETCHING

被引：96

作者：

OLDHAM, WG

NEUREUTHER, AR

SUNG, C

REYNOLDS, JL

NANDGAONKAR, SN

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1455 / 1459

页数：5

共 9 条

[1] OPTIMIZATION OF AL STEP COVERAGE THROUGH COMPUTER-SIMULATION AND SCANNING ELECTRON-MICROSCOPY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (01): : 13 - 19
[2] EQUILIBRIUM TOPOGRAPHY OF SPUTTERED AMORPHOUS SOLIDS .3. COMPUTER SIMULATION
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[J]. JOURNAL OF MATERIALS SCIENCE, 1972, 7 (04) : 467 - &
[3] EVOLUTION OF WELL-DEFINED SURFACE CONTOUR SUBMITTED TO ION-BOMBARDMENT - COMPUTER-SIMULATION AND EXPERIMENTAL INVESTIGATION
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[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (01) : 52 - 62
[4] REDEPOSITION - SERIOUS PROBLEM IN RF SPUTTER ETCHING OF STRUCTURES WITH MICRONMETER DIMENSIONS
LEHMANN, HW
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 281 - 284
[5] MODELING ION MILLING
NEUREUTHER, AR
LIU, CY
TING, CH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1767 - 1771
[6] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY
OLDHAM, WG
NANDGAONKAR, SN
NEUREUTHER, AR
OTOOLE, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 717 - 722
[7] SIMULATION OF DRY ETCHED LINE EDGE PROFILES
REYNOLDS, JL
NEUREUTHER, AR
OLDHAM, WG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1772 - 1775
[8] STUDY OF PLANARIZED SPUTTER-DEPOSITED SIO2
TING, CY
VIVALDA, VJ
SCHAEFER, HG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03): : 1105 - 1112
[9] SIMULATION OF PLASMA-ETCHED LITHOGRAPHIC STRUCTURES
VISWANATHAN, NS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 388 - 390

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