GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY

被引：226

作者：

OLDHAM, WG

NANDGAONKAR, SN

NEUREUTHER, AR

OTOOLE, M

机构：

[1] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 04期

关键词：

D O I：

10.1109/T-ED.1979.19482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simulator is described which produces line-edge profiles at various key stages in integrated circuit processing. Optical models are included for contact and projection lithography. The effects of multiple wavelengths, defocus, and partially coherent sources may be simulated in projection lithography. The positive resist model of Dill is used with the string development model of Jewett to obtain resist line-edge profiles. The string model is generalized to surface reaction rate limited etching of any layer. The application of the simulator to projection lithography is illustrated with a number of examples including monochromatic and multiwavelength exposure, the effect of a post-exposure anneal, plasma descum, and defocus. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：717 / 722

页数：6

共 19 条

[1] OPTIMIZATION OF AL STEP COVERAGE THROUGH COMPUTER-SIMULATION AND SCANNING ELECTRON-MICROSCOPY [J].