STUDY OF PLANARIZED SPUTTER-DEPOSITED SIO2

被引：70

作者：

TING, CY ^{[1
]}

VIVALDA, VJ ^{[1
]}

SCHAEFER, HG ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.569519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1105 / 1112

页数：8

共 16 条

[1] PREDICTION OF ION-BOMBARDED SURFACE TOPOGRAPHIES USING FRANKS KINEMATIC THEORY OF CRYSTAL DISSOLUTION
BARBER, DJ
FRANK, FC
MOSS, M
STEEDS, JW
TSONG, IST
[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (07) : 1030 - 1040
[2] SECONDARY PROCESSES IN EVOLUTION OF SPUTTER-TOPOGRAPHIES
BAYLY, AR
[J]. JOURNAL OF MATERIALS SCIENCE, 1972, 7 (04) : 404 - &
[3] GROWTH OF TOPOGRAPHY DURING SPUTTERING OF AMORPHOUS SOLIDS .4. GENERALIZED THEORY
CARTER, G
COLLIGON, JS
NOBES, MJ
[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (10) : 1473 - 1481
[4] EQUILIBRIUM TOPOGRAPHY OF SPUTTERED AMORPHOUS SOLIDS .3. COMPUTER SIMULATION
CATANA, C
CARTER, G
COLLIGON, JS
[J]. JOURNAL OF MATERIALS SCIENCE, 1972, 7 (04) : 467 - &
[5] EVOLUTION OF WELL-DEFINED SURFACE CONTOUR SUBMITTED TO ION-BOMBARDMENT - COMPUTER-SIMULATION AND EXPERIMENTAL INVESTIGATION
DUCOMMUN, JP
CANTAGREL, M
MOULIN, M
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (01) : 52 - 62
[6] EQUILIBRIUM TOPOGRAPHY OF SPUTTERED AMORPHOUS SOLIDS - COMMENT
ISHITANI, T
KATO, M
SHIMIZU, R
[J]. JOURNAL OF MATERIALS SCIENCE, 1974, 9 (03) : 505 - 508
[7] RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING
JONES, RE
STANDLEY, CL
MAISSEL, LI
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4656 - &
[8] REDEPOSITION - SERIOUS PROBLEM IN RF SPUTTER ETCHING OF STRUCTURES WITH MICRONMETER DIMENSIONS
LEHMANN, HW
KRAUSBAUER, L
WIDMER, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 281 - 284
[9] CONTROL OF RF SPUTTERED FILM PROPERTIES THROUGH SUBSTRATE TUNING
LOGAN, JS
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 172 - &
[10] LOGAN JS, 1973, INT PULVERISATION CA, P27

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