Physical properties and efficiency of GaNP light emitting diodes

被引：22

作者：

Chamings, J. ^{[1
]}

Ahmed, S. ^{[1
]}

Sweeney, S. J. ^{[1
]}

Odnoblyudov, V. A. ^{[2
]}

Tu, C. W. ^{[2
]}

机构：

[1] Univ Surrey, Fac Engn & Phys Sci, Adv Technol Inst, Surrey GU2 7XH, England

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2830696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaNP/GaP is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP/GaN(0.006)P(0.994)/GaP LED structures are presented. Below similar to 110 K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +1.6 meV/kbar, substantially lower than the Gamma band gap of GaP (+9.5 meV/kbar). Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.

引用

页数：3

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