Spin-orbit interaction effect in the electronic structure of Bi2Te3 observed by angle-resolved photoemission spectroscopy

被引:98
作者
Noh, H. -J. [1 ,2 ,3 ]
Koh, H. [2 ,3 ]
Oh, S. -J. [2 ,3 ]
Park, J. -H. [4 ]
Kim, H. -D. [5 ]
Rameau, J. D. [6 ,7 ]
Valla, T. [6 ]
Kidd, T. E. [6 ]
Johnson, P. D. [6 ]
Hu, Y. [6 ]
Li, Q. [6 ]
机构
[1] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151742, South Korea
[3] Seoul Natl Univ, Ctr Strongly Correlated Mat Res, Seoul 151742, South Korea
[4] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[5] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea
[6] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
[7] SUNY Stony Brook, Dept Phys & Astron, Stony Brook, NY 11974 USA
关键词
D O I
10.1209/0295-5075/81/57006
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic structure of p-type doped Bi2Te3 is studied by angle-resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off. the Gamma-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of Bi2Te3. A successive time-dependent ARPES measurement also reveals that the electron-like bands crossing E-F near the (Gamma) under bar -point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of Bi2Te3. Copyright (c) EPLA, 2008.
引用
收藏
页数:5
相关论文
共 23 条
[1]   INFRA-RED FARADAY ROTATION AND FREE CARRIER ABSORPTION IN BI2TE3 [J].
AUSTIN, IG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (488) :169-179
[2]   ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].
CHIANG, TC ;
KNAPP, JA ;
AONO, M ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522
[3]   Thermoelectric cooling and power generation [J].
DiSalvo, FJ .
SCIENCE, 1999, 285 (5428) :703-706
[4]   GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE [J].
DRABBLE, JR ;
GROVES, RD ;
WOLFE, R .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459) :430-443
[5]   Electronic structure of Bi2Te3 studied by angle-resolved photoemission [J].
Greanya, VA ;
Tonjes, WC ;
Liu, R ;
Olson, CG ;
Chung, DY ;
Kanatzidis, MG .
PHYSICAL REVIEW B, 2000, 62 (24) :16425-16429
[6]   EFFECT OF QUANTUM-WELL STRUCTURES ON THE THERMOELECTRIC FIGURE OF MERIT [J].
HICKS, LD ;
DRESSELHAUS, MS .
PHYSICAL REVIEW B, 1993, 47 (19) :12727-12731
[7]   BAND STRUCTURE OF BISMUTH TELLURIDE [J].
KATSUKI, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (01) :58-&
[8]   Screened exchange LDA determination of the ground and excited state properties of thermoelectrics:: Bi2Te3 -: art. no. 035205 [J].
Kim, M ;
Freeman, AJ ;
Geller, CB .
PHYSICAL REVIEW B, 2005, 72 (03)
[9]   NON-PARABOLICITY OF HIGHEST VALENCE BAND OF BI-2TE-3 FROM SHUBNIKOV-DEHAAS EFFECT [J].
KOHLER, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 74 (02) :591-600
[10]  
LANGE PW, 1939, NATURWISSENSCHAFTEN, V0027