Electronic properties and mid-infrared transitions in self-assembled quantum dots

被引:3
作者
Leburton, JP
Fonseca, LRC
Shumway, J
Ceperley, D
Martin, RM
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 1B期
关键词
nanostructures; quantum dots; shell structures; single-electron charging;
D O I
10.1143/JJAP.38.357
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a detailed model of the electronic properties of single and vertically aligned self-assembled pyramidal InAs/GaAs quantum dots (SADs) which is based on the self-consistent solution of three-dimensional (3D) Poisson and Schroedinger equations within the local (spin) density approximation. Nonparabolicity of the band structure and a continuum model for strain between GaAs and InAs results in position and energy dependent effective mass, In single SADs, shell structures obeying Hund's rule for various occupation numbers in the pyramids agree well with recent capacitance measurements, The electronic spectra of SADs of various shapes have been determined with intraband level transitions and mid-infrared optical matrix elements, In the case of two vertically aligned pyramidal SADs, we show that quantum mechanical coupling alone between identical dots underestimates the magnitude of the coupling between the dots, which in large part is due to piezoelectricity and size difference between SADs.
引用
收藏
页码:357 / 365
页数:9
相关论文
共 36 条
[1]  
CHUANG SL, 1995, PHYSICS OPTOELECTRON
[2]   Electronic structure of InAs/GaAs self-assembled quantum dots [J].
Cusack, MA ;
Briddon, PR ;
Jaros, M .
PHYSICAL REVIEW B, 1996, 54 (04) :R2300-R2303
[3]   Red-emitting semiconductor quantum dot lasers [J].
Fafard, S ;
Hinzer, K ;
Raymond, S ;
Dion, M ;
McCaffrey, J ;
Feng, Y ;
Charbonneau, S .
SCIENCE, 1996, 274 (5291) :1350-1353
[4]   Self-consistent calculation of the electronic structure and electron-electron interaction in self-assembled InAs-GaAs quantum dot structures [J].
Fonseca, LRC ;
Jimenez, JL ;
Leburton, JP ;
Martin, RM .
PHYSICAL REVIEW B, 1998, 57 (07) :4017-4026
[5]   Electronic coupling in InAs/GaAs self-assembled stacked double-quantum-dot systems [J].
Fonseca, LRC ;
Jimenez, JL ;
Leburton, JP .
PHYSICAL REVIEW B, 1998, 58 (15) :9955-9960
[6]   Shell structure and electron-electron interaction in self-assembled InAs quantum dots [J].
Fricke, M ;
Lorke, A ;
Kotthaus, JP ;
MedeirosRibeiro, G ;
Petroff, PM .
EUROPHYSICS LETTERS, 1996, 36 (03) :197-202
[7]  
GARCIA JM, 1994, APPL PHYS LETT, V71, P2252
[8]   Surface segregation in (Ga,In)As/GaAs quantum boxes [J].
Grandjean, N ;
Massies, J ;
Tottereau, O .
PHYSICAL REVIEW B, 1997, 55 (16) :10189-10192
[9]   INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].
GRUNDMANN, M ;
STIER, O ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981
[10]  
IMAMURA K, 1995, JPN J APPL PHYS, V34, P3558