Dielectric breakdown strength in sol-gel derived PZT thick films

被引：54

作者：

Chen, HD

Udayakumar, KR

Gaskey, CJ

Cross, LE

机构：

[1] Materials Research Laboratory, Pennsylvania State University, University Park

[2] Texas Instruments, Inc., Dallas, TX 75265

来源：

INTEGRATED FERROELECTRICS | 1997年 / 15卷 / 1-4期

关键词：

D O I：

10.1080/10584589708015699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dielectric DC breakdown strengths of ferroelectric lead zirconate titanate (PZT) thick films are examined with respect to the film thickness, top electrode area, and grain size. The breakdown strengths of PZT(52/48) films are as much as two times higher than the predicted values empirically derived from bulk ceramics by earlier researchers. I-V characteristics show three distinct conduction mechanisms on 8 mu m PZT films. Samples aged in air for one year show lower breakdown strengths, higher leakage currents, and higher onset voltages of the space-charge-limited conduction (SCLC) mechanism.

引用

页码：89 / 98

页数：10

共 16 条

[1]

BERNSTEIN JJ, IN PRESS IEEE J FERR

[2] DIELECTRIC, FERROELECTRIC, AND PIEZOELECTRIC PROPERTIES OF LEAD-ZIRCONATE-TITANATE THICK-FILMS ON SILICON SUBSTRATES [J].