Imaging of friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111)A surfaces

被引：90

作者：

Kanisawa, K

Butcher, MJ

Yamaguchi, H

Hirayama, Y

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[3] JST, CREST, Kawaguchi, Saitama 3310012, Japan

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.86.3384

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs(111)A substrate were characterized using low-temperature scanning tunneling microscopy. Using dI/dV signal mapping, LDOS standing waves were clearly imaged at point defects and within nanostructures. Measurement of the wavelength as a function of bias voltage showed a nonparabolic dispersion relation for the conduction band. The observed wave features originate from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.

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页码：3384 / 3387

页数：4

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