Scanning tunneling spectroscopy on n-InAs(110): Landau-level quantization and scattering of electron waves at dopant atoms

被引：21

作者：

Dombrowski, R ^{[1
]}

Wittneven, C ^{[1
]}

Morgenstern, M ^{[1
]}

Wiesendanger, R ^{[1
]}

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / Suppl 1期

关键词：

D O I：

10.1007/s003390051130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the in-situ cleaved n-InAs(110) surface by means of low-temperature scanning tunneling spectroscopy and microscopy in magnetic fields up to 6 T perpendicular to the surface. The dI/dV (V)-curves exhibit characteristic oscillations in magnetic fields, which can be attributed to Landau-level splitting of the conduction band. The energy dependence of the effective electron mass is determined. Spatially resolved dI/dV-images exhibit circular symmetrical corrugations at the surface. These are ascribed to scattered electron waves at dopant atoms below the surface. From the energy dependence of their diameter, the dispersion of the InAs conduction band at the Gamma-point is estimated.

引用

页码：S203 / S206

页数：4

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