ANOMALOUS PINNING OF THE FERMI LEVEL AT THE INAS(110)-CU INTERFACE OBTAINED AT 10-K

Detailed investigations of the electronic states of the low temperature (LT) InAs(110)-Cu interface and the E(F)-pinning for theta almost-equal-to 0.01-0.1 monolayers (ML) give rise to a strongly anomalous E(F)-pinning (in a position far above the edge of the conduction band, E(c)), thus forming a strong two-dimensional electronic channel at the interface (strong downwards band bending). Heating the sample to the room temperature (RT) shifts E(F) down to a level corresponding to the RT deposition. E(F) slightly shifts down with respect to E(c) at continuous LT-deposition on p-InAs up to theta almost-equal-to 1 ML. The interfaces behave essentially different at RT deposition. Probably pinning of E(F) takes place on surface states (SS) of two different types. First, SS introduced under adsorption of individual Cu atoms (AIS) and second, under formation of Cu clusters.