Sb or Cs covered InAs(110) surfaces: Moving E(F) into conduction band and quantized 2D electron channel

被引:22
作者
Aristov, VY
Grehk, M
Zhilin, VM
TalebIbrahimi, A
Indlekofer, G
Hurych, Z
LeLay, G
Soukiassian, P
机构
[1] CNRS,CRMC2,F-13288 MARSEILLE 09,FRANCE
[2] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115
[3] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA
[4] KTH,S-10044 STOCKHOLM,SWEDEN
[5] CTR UNIV PARIS SUD,LURE,F-91405 ORSAY,FRANCE
[6] CTR ETUD SACLAY,SRSIM,DRECAM,DSM,CEA,F-91191 GIF SUR YVETTE,FRANCE
关键词
D O I
10.1016/S0169-4332(96)00123-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
With the study of the formation of Sb/InAs interface by synchrotron radiation photoemission, we add a new piece of evidence that a two-dimensional free electron gas can be created at room temperature, on the (110) cleaved surface of InAs upon adsorption of few metal atoms. In the case of Cs, we demonstrate that this very interesting feature results from 2D channels quantized in the direction normal to the surface.
引用
收藏
页码:73 / 78
页数:6
相关论文
共 36 条
[1]  
ANDERSSON CMM, 1995, P 22 INT C PHYS SEM, V22, P489
[2]   ANOMALOUS PINNING OF THE FERMI LEVEL AT THE INAS(110)-CU INTERFACE OBTAINED AT 10-K [J].
ARISTOV, VY ;
BOLOTIN, IL ;
GELAKHOVA, SG .
SURFACE SCIENCE, 1991, 251 :453-456
[3]   GIANT BAND BENDING INDUCED BY AG ON INAS(110) SURFACES AT LOW-TEMPERATURE [J].
ARISTOV, VY ;
LELAY, G ;
VINH, LT ;
HRICOVINI, K ;
BONNET, JE .
PHYSICAL REVIEW B, 1993, 47 (04) :2138-2145
[4]   ALKALI-METAL INDUCED HIGHEST FERMI-LEVEL PINNING POSITION ABOVE SEMICONDUCTOR CONDUCTION-BAND MINIMUM [J].
ARISTOV, VY ;
LELAY, G ;
SOUKIASSIAN, P ;
HRICOVINI, K ;
BONNET, JE ;
OSVALD, J ;
OLSSON, O .
EUROPHYSICS LETTERS, 1994, 26 (05) :359-364
[5]   CS-INDUCED HIGHEST E(F) JUMP ABOVE INAS(110) CONDUCTION-BAND MINIMUM [J].
ARISTOV, VY ;
LELAY, G ;
SOUKIASSIAN, P ;
HRICOVINI, K ;
BONNET, JE ;
OSVALD, J ;
OLSSON, O .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2709-2712
[6]   ELECTRON-SPECTROSCOPY STUDY OF NOBLE-METAL (AU, CU, AG)-INAS(110) INTERFACES AT 10-300 K [J].
ARISTOV, VY .
PHYSICA SCRIPTA, 1991, T39 :333-338
[7]   Cesium-induced quantized 2D electron channel on the InAs(110) surface [J].
Aristov, VY ;
LeLay, G ;
Grehk, M ;
Zhilin, VM ;
TalebIbrahimi, A ;
Indlekofer, G ;
Soukiassian, P .
SURFACE REVIEW AND LETTERS, 1995, 2 (06) :723-729
[8]  
ARISTOV VY, 1995, SURF SCI, V331, P64
[9]   OXIDATION OF INAS(110) AND CORRELATED CHANGES OF ELECTRONIC SURFACE-PROPERTIES [J].
BAIER, HU ;
KOENDERS, L ;
MONCH, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1095-1099
[10]  
BAIER HU, 1986, SOLID STATE COMMUN, V58, P328