Sb or Cs covered InAs(110) surfaces: Moving E(F) into conduction band and quantized 2D electron channel

被引：22

作者：

Aristov, VY

Grehk, M

Zhilin, VM

TalebIbrahimi, A

Indlekofer, G

Hurych, Z

LeLay, G

Soukiassian, P

机构：

[1] CNRS,CRMC2,F-13288 MARSEILLE 09,FRANCE

[2] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115

[3] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

[4] KTH,S-10044 STOCKHOLM,SWEDEN

[5] CTR UNIV PARIS SUD,LURE,F-91405 ORSAY,FRANCE

[6] CTR ETUD SACLAY,SRSIM,DRECAM,DSM,CEA,F-91191 GIF SUR YVETTE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1996年 / 104卷

关键词：

D O I：

10.1016/S0169-4332(96)00123-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

With the study of the formation of Sb/InAs interface by synchrotron radiation photoemission, we add a new piece of evidence that a two-dimensional free electron gas can be created at room temperature, on the (110) cleaved surface of InAs upon adsorption of few metal atoms. In the case of Cs, we demonstrate that this very interesting feature results from 2D channels quantized in the direction normal to the surface.

引用

收藏

页码：73 / 78

页数：6

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