共 21 条
[3]
(110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1979, 19 (04)
:2074-2082
[5]
THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES
[J].
PHYSICAL REVIEW B,
1984, 29 (02)
:785-792
[6]
UNOCCUPIED SURFACE-STATES OF (1X1) SB OVERLAYERS ON GAAS(110) AND INP(110)
[J].
PHYSICAL REVIEW B,
1988, 37 (02)
:855-857
[7]
LOW-ENERGY ELECTRON-DIFFRACTION INTENSITY ANALYSIS OF THE ATOMIC GEOMETRY OF P(1X1) MONOLAYERS OF BISMUTH ON GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (04)
:3412-3416
[8]
DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML)
[J].
PHYSICAL REVIEW B,
1982, 26 (02)
:803-814
[9]
ELECTRONIC-STRUCTURE OF AN ORDERED OVERLAYER ON A SEMICONDUCTOR - BI/GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (03)
:850-854
[10]
STRUCTURAL AND ELECTRONIC-PROPERTIES OF BI/GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1989, 7 (04)
:936-944