THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES

[1] NATURE OF VICINAL LASER-ANNEALED SI(111) SURFACES [J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3303 - 3309

[2] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082

[3] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065

[4] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296

[5] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47

[6] STEP-FORMATION ENERGIES AND DOMAIN ORIENTATIONS AT SI(111) SURFACES [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4892 - 4895

[7] CORRELATION-EFFECTS ON THE ELECTRONIC-STRUCTURE OF 1X1 AND 2X1 RECONSTRUCTED SI(111) SURFACES [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7431 - 7434

[8] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396

[9] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1973, 36 (01) : 109 - 122

[10] KAPLAN R, 1982, SURF SCI, V116, P104, DOI 10.1016/0039-6028(82)90681-1

[1] NATURE OF VICINAL LASER-ANNEALED SI(111) SURFACES [J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3303 - 3309

[2] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082

[3] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065

[4] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296

[5] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47

[6] STEP-FORMATION ENERGIES AND DOMAIN ORIENTATIONS AT SI(111) SURFACES [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4892 - 4895

[7] CORRELATION-EFFECTS ON THE ELECTRONIC-STRUCTURE OF 1X1 AND 2X1 RECONSTRUCTED SI(111) SURFACES [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7431 - 7434

[8] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396

[9] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1973, 36 (01) : 109 - 122

[10] KAPLAN R, 1982, SURF SCI, V116, P104, DOI 10.1016/0039-6028(82)90681-1