ALKALI-METAL INDUCED HIGHEST FERMI-LEVEL PINNING POSITION ABOVE SEMICONDUCTOR CONDUCTION-BAND MINIMUM

被引：53

作者：

ARISTOV, VY

LELAY, G

SOUKIASSIAN, P

HRICOVINI, K

BONNET, JE

OSVALD, J

OLSSON, O

机构：

[1] CENS,CEA,SERV RECH SURFACES & IRRADIAT MAT,F-91191 GIF SUR YVETTE,FRANCE

[2] UNIV PARIS 11,DEPT PHYS,F-91405 ORSAY,FRANCE

[3] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

[4] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

[5] UNIV AIX MARSEILLE 1,UFR SCI MAT,F-13331 MARSEILLE 3,FRANCE

[6] UNIV CERGY PONTOISE,F-95806 CERGY,FRANCE

[7] SLOVAK ACAD SCI,INST ELECT ENGN,CS-84239 BRATISLAVA,SLOVAKIA

来源：

EUROPHYSICS LETTERS | 1994年 / 26卷 / 05期

关键词：

D O I：

10.1209/0295-5075/26/5/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The room temperature deposition of small amounts of Cs on the InAs(110) surface induces the highest Fermi-level pinning position (approximately 0.6 eV) above the conduction band minimum ever met for any semiconductor. The Fermi-level movement is monitored by core level photoemission spectroscopy using synchrotron radiation. This striking behaviour is explained in terms of donor-type surface states induced by few Cs atoms present on InAs(110) and suggests the existence of a two-dimensional electron gas at the surface.

引用

页码：359 / 364

页数：6

共 25 条

[1] THE AG/N-INSB(110) INTERFACE AT 10-K - 1ST OBSERVATION OF AN ANOMALOUS FERMI-LEVEL PINNING [J].