Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

被引：19

作者：

Chen, Wei-Ren ^{[1
]}

Chang, Ting-Chang

Liu, Po-Tsun

Yeh, Jui-Lung

Tu, Chun-Hao

Lou, Jen-Chung

Yeh, Ching-Fa

Chang, Chun-Yen

机构：

[1] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Inst Electroopt Engn, Dept Phys, Kaohsiung, Fukuoka 804, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 08期

关键词：

D O I：

10.1063/1.2760144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.

引用

页数：3

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