Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology

被引：37

作者：

Chang, TC ^{[1
]}

Liu, PT

Yan, ST

Sze, SM

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

[2] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[4] Natl Nano Device Lab, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Dept Photon & Display Inst, Hsinchu, Taiwan

[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 03期

关键词：

D O I：

10.1149/1.1859674

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Spherical and well-separated tungsten nanocrystals embedded in the SiO2 layer are demonstrated for the low-voltage nonvolatile memory device. The tungsten dots are formed, based on the thermal oxidation of the tungsten silicide, with a mean size and aerial density of 4.5 nm and 3.7 x 10(11)/ cm(2), respectively. A pronounced capacitance-voltage hysteresis is observed with a memory window of 0.95 V under the 3 V programming voltage. Also, the endurance of the memory device is not degraded up to 106 write/erase cycles. (C) 2005 The Electrochemical Society.

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页码：G71 / G73

页数：3

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