Metal nanocrystal memories - Part I: Device design and fabrication

被引:451
作者
Liu, ZT [1 ]
Lee, C [1 ]
Narayanan, V [1 ]
Pei, G [1 ]
Kan, EC [1 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
关键词
memories; metals; MOSFETs; work function;
D O I
10.1109/TED.2002.802617
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the design principles and fabrication process of metal nanocrystal memories. The advantages of metal nanocrystals over their semiconductor counterparts include higher density of states, stronger coupling with the channel, better size scalability, and the design freedom of engineering the work functions to optimize device characteristics. One-dimensional (I-D) analyses are provided to illustrate the concept of work function engineering, both in direct-tunneling and F-N-tunneling regimes. A self-assembled nanocrystal formation process by rapid thermal annealing of ultrathin metal film deposited on top of gate oxide is developed and integrated with NMOSFET to fabricate such devices. More detailed electrical characterization will be presented in Part II of this work.
引用
收藏
页码:1606 / 1613
页数:8
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