A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide

被引:35
作者
King, YC [1 ]
King, TJ [1 ]
Hu, CM [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
关键词
nonvolatile memory device; thin oxide memory;
D O I
10.1109/55.778160
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A memory device using silicon rich oxide (SRO) as the charge trapping layer for dynamic or quasi-nonvolatile memory application is proposed, The device achieved write and erase speed at low voltage comparable to that of a dynamic-random-access memory (DRAM) cell with a much longer data retention time. This device has a SRO charge trapping layer on top of a very thin tunneling oxide (<2 nm), Using the traps in the SRO layer for charge storage, a symmetrical write/erase characteristics were achieved, This new SRO cell has an erase time much shorter than values of similar devices reported in the literature.
引用
收藏
页码:409 / 411
页数:3
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