ELECTRICAL CHARGE INJECTION AND STORAGE IN OFF-STOICHIOMETRIC SIO2-FILMS

被引:6
作者
LOPEZ, M [1 ]
FALCONY, C [1 ]
机构
[1] INST POLITECN NACL, CTR INVEST & ESTUDIOS AVANZADOS, DEPT FIS, MEXACO CITY 07000, DF, MEXICO
关键词
D O I
10.1557/JMR.1989.1233
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1233 / 1237
页数:5
相关论文
共 13 条
[1]   ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J].
DIMARIA, DJ ;
KIRTLEY, JR ;
PAKULIS, EJ ;
DONG, DW ;
KUAN, TS ;
PESAVENTO, FL ;
THEIS, TN ;
CUTRO, JA ;
BRORSON, SD .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :401-416
[2]   HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].
DIMARIA, DJ ;
DONG, DW .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735
[3]   EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIES [J].
DIMARIA, DJ ;
DONG, DW ;
FALCONY, C ;
BRORSON, SR .
ELECTRON DEVICE LETTERS, 1982, 3 (07) :191-195
[4]   PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].
DONG, D ;
IRENE, EA ;
YOUNG, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :819-823
[5]   HIGH-FIELD CONDUCTION IN OFF-STOICHIOMETRIC SIO2-FILMS [J].
FALCONY, C ;
HELMAN, JS .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :442-444
[6]   ENHANCED ELECTRON INJECTION INTO SIO2 LAYERS USING GRANULAR METAL-FILMS [J].
FALCONY, C ;
DIMARIA, DJ ;
GUARNIERI, CR .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5347-5349
[7]   CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].
FROHMANB.D ;
LENZLINGER, M .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+
[8]  
FROHMANBENTCHKO.D, 1971, J SOLID STATE CIRC C, V6, P301
[9]   EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J].
GDULA, RA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :42-47
[10]   TIME-RESOLVED HOLE TRANSPORT IN ALPHA-SIO2 [J].
HUGHES, RC .
PHYSICAL REVIEW B, 1977, 15 (04) :2012-2020