EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIES

被引：10

作者：

DIMARIA, DJ ^{[1
]}

DONG, DW ^{[1
]}

FALCONY, C ^{[1
]}

BRORSON, SR ^{[1
]}

机构：

[1] MIT, CAMBRIDGE, MA 02139 USA

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 07期

关键词：

D O I：

10.1109/EDL.1982.25534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：191 / 195

页数：5

共 15 条

[1] ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTURE
DIMARIA, DJ
DEMEYER, KM
DONG, DW
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 179 - 181
[2] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS
DIMARIA, DJ
GHEZ, R
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841
[3] ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYER
DIMARIA, DJ
DEMEYER, KM
SERRANO, CM
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4825 - 4842
[4] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
DIMARIA, DJ
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735
[5] DUAL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIES
DIMARIA, DJ
DEMEYER, KM
DONG, DW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1047 - 1053
[6] STUDY OF CHARGE TRAPPING AS A DEGRADATION MECHANISM IN ELECTRICALLY ALTERABLE READ-ONLY-MEMORIES
FALCONY, C
DIMARIA, DJ
DONG, DW
DEMEYER, KM
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 43 - 47
[7] FALCONY C, UNPUB
[8] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
FEIGL, FJ
YOUNG, DR
DIMARIA, DJ
LAI, S
CALISE, J
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682
[9] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992
[10] OBSERVATION OF AMORPHOUS-SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMS
HARTSTEIN, A
TSANG, JC
DIMARIA, DJ
DONG, DW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 836 - 837

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