DUAL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIES

被引：9

作者：

DIMARIA, DJ

DEMEYER, KM

DONG, DW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期

关键词：

D O I：

10.1109/T-ED.1981.20483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1047 / 1053

页数：7

共 19 条

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[3] ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTURE [J].

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[4] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J].

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[6] DUAL ELECTRON INJECTOR STRUCTURE [J].

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DONG, DW .

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[7] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[8]

DIMARIA DJ, 1981, J APPL PHYS

[9] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].

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IRENE, EA ;

YOUNG, DR .

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[10] FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE [J].

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