Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices

被引：106

作者：

Ferry, DK ^{[1
]}

Akis, R ^{[1
]}

Vasileska, D ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We incorporate an effective potential in a three-dimensional MOSFET simulation, in which the transport is handled by an ensemble Monte Carlo approach. We find that the threshold voltage is shifted and the carrier density is moved away from the interface, both effects given by quantization provided within the channel. However, the mean velocity of the carriers is not affected significantly by the introduction of this effective potential, and is only reduced by about 10%.

引用

页码：287 / 290

页数：4

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