Mechanical properties of PbTe-based thermoelectric semiconductors

被引：145

作者：

Gelbstein, Y. ^{[1
]}

Gotesman, G. ^{[1
]}

Lishzinker, Y. ^{[1
]}

Dashevsky, Z. ^{[1
]}

Dariel, M. P. ^{[1
]}

机构：

[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel

来源：

SCRIPTA MATERIALIA | 2008年 / 58卷 / 04期

关键词：

semiconductor compounds; mechanical properties; hardness; electrical properties; lead telluride;

D O I：

10.1016/j.scriptamat.2007.10.012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper is concerned with the mechanical properties of PbTe and Pb1-xSnxTe compounds and their correlation with the respective charge carrier concentrations. Single-crystals and samples prepared by powder metallurgy display similar general trends. It was found that although there is a similar electronic behavior (constant scattering factor of -0.5) for the various compositions examined, the mechanical properties of the compounds are completely different. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：251 / 254

页数：4

共 8 条

[1]

ABLOVA MS, 1969, FIZ TVERD TELA+, V10, P1929

[2] MICROHARDNESS IN PBTE AND RELATED ALLOYS [J].