Transport mechanisms in evaporated C-60 film evaluated by means of field effect

被引：17

作者：

Kaneto, K

Yamanaka, K

Rikitake, K

Akiyama, T

Takashima, W

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 03期

关键词：

fullerenes; C-60; film; field effect transistor; mobility; carrier density;

D O I：

10.1143/JJAP.35.1802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical transport in an evaporated C-60 film is studied by means of the field effect. Characteristics of the field effect transistor (FET) show an enchancement n-channel type with the threshold voltage of 2.0 V. At room temperature, the field effect mobility and the carrier density are estimated to be 4.8X10(-5) cm(2)/(Vs) and 5.6X10(14) cm(-3), respectively. Activation energies of the mobility and conductivity have nearly the same value of 0.54 eV. The transport mechanism is discussed in terms of the hopping transport.

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页码：1802 / 1805

页数：4

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