Molecular alignments in sexiphenyl thin films epitaxially grown on muscovite

被引:48
作者
Plank, H
Resel, R
Sitter, H
Andreev, A
Sariciftci, NS
Hlawacek, G
Teichert, C
Thierry, A
Lotz, B
机构
[1] Graz Tech Univ, Inst Solid State Phys, A-8010 Graz, Austria
[2] Univ Linz, Inst Solid State & Semicond Phys, A-4040 Linz, Austria
[3] Univ Linz, A-4040 Linz, Austria
[4] Univ Leoben, Inst Phys, A-8700 Leoben, Austria
[5] Inst Charles Sadron, CNRS, UPR 22, F-67083 Strasbourg, France
基金
奥地利科学基金会;
关键词
epitaxy; grain boundary; electron diffraction; organic semiconductors;
D O I
10.1016/S0040-6090(03)01021-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The epitaxial orientations of highly crystalline para-sexiphenyl (C36H26) films on mica (001) surfaces are investigated by selected area electron diffraction (SAED) and transmission electron microscopy (TEM). Films at the early growth stage (growth time 26 s) and at an advanced growth stage (growth time 10 min) are studied. Films at the early growth stage exhibit only three-dimensional islands with an average size of 60 x 30 x 10 nm(3), whereas films at an advanced growth stage consist of long oriented nano-fibres with a needle-like morphology. We identified three different types of epitaxial relations between the mica (001) substrate and the sexiphenyl crystallites, which are the same in both growth stages. Moreover, within a single island as well as within a single fibre crystalline domains with these three epitaxial orientations are observed. At the advanced growth stage, these domains are aligned antiparallel or perpendicular to the fibre axes; the typical size of the domains is 20 nm. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:108 / 114
页数:7
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