An intermediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

Intermediate (1-1.5 monolayer) stage of InAs deposition on the GaAs(100) singular and vicinal (3 degrees towards [011] direction) surfaces results in the formation of different InAs surface arrangements, The formation of few monolayer-height quantum wires along [001] direction occurs immediately after 1 monolayer InAs deposition on the singular surface. The characteristic period equals similar to 30 nm. Increase in mean thickness of InAs to 1.5 monolayer results in a less pronounced surface corrugation (''parquet'' like structures) and the characteristic period increases to 50-60 nm. The wire-like structures on vicinal surfaces occurs independently of the mean thickness of InAs (within the region 1-1.5 monolayers).