Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk

被引：15

作者：

Naito, Muneyuki ^{[1
]}

Ishimaru, Manabu ^{[1
]}

Hirotsu, Yoshihiko ^{[1
]}

Kojima, Rie ^{[2
]}

Yamada, Noboru ^{[2
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Panasonic Corp, Digital & Network Technol Dev Ctr, Osaka 5708501, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 10期

关键词：

LOCAL-STRUCTURE; CRYSTALLIZATION; FILMS; DIFFRACTION; MEMORY;

D O I：

10.1063/1.3373419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomistic structures of the Ge2Sb2Te5 thin film in the real phase-change disk have been investigated using transmission electron microscopy (TEM). As-deposited amorphous Ge2Sb2Te5 films were laser-irradiated for initialization (crystallization) and recording. Cross-sectional TEM observations revealed that the recording mark was fully amorphized by laser irradiation. A slight difference between the as-deposited and the laser irradiation-induced amorphous Ge2Sb2Te5 was observed in the intensity profile of nanobeam electron diffraction patterns and atomic pair distribution functions. This difference was attributed to structural relaxation of amorphous Ge2Sb2Te5, which gives rise to the alteration of chemical order. (C) 2010 American Institute of Physics. [doi:10.1063/1.3373419]

引用

页数：5

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