Schottky barrier engineering in III-V nitrides via the piezoelectric effect

被引：126

作者：

Yu, ET ^{[1
]}

Dang, XZ

Yu, LS

Qiao, D

Asbeck, PM

Lau, SS

Sullivan, GJ

Boutros, KS

Redwing, JM

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Rockwell Int Sci Ctr, Thousand Oaks, CA 91358 USA

[3] Epitron ATMI, Phoenix, AZ 85027 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 13期

关键词：

D O I：

10.1063/1.122312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes. (C) 1998 American Institute of Physics. [S0003-6951(98)03939-4].

引用

页码：1880 / 1882

页数：3

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