HIGH TRANSCONDUCTANCE-NORMALLY-OFF GAN MODFETS

被引：89

作者：

OZGUR, A ^{[1
]}

KIM, W ^{[1
]}

FAN, Z ^{[1
]}

BOTCHKAREV, A ^{[1
]}

SALVADOR, A ^{[1
]}

MOHAMMAD, SN ^{[1
]}

SVERDLOV, B ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 16期

关键词：

GALLIUM NITRIDE; MODFETS;

D O I：

10.1049/el:19950921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normally-off GaN based modulation doped field-effect transistors have been fabricated. The extrinsic transconductance of MODFETs with gate and channel lengths of 3 and 5 mu m, respectively, is as high as 120mS/mm. The devices exhibit 300 mA/mm current al a positive gate bias of 3V. This transconductance value compares very favourably with the 45mS/mm and 24mS/mm reported earlier for 1 and 0.23 mu m gate devices, respectively.

引用

页码：1389 / 1390

页数：2

共 8 条

[1]

BINARI S, 1994, INT S COMPOUND SEMIC

[2] III-V NITRIDES FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS [J].