Correlation between quantized electronic states and oscillatory thickness relaxations of 2D Pb islands on Si(111)-(7 x 7) surfaces

被引：223

作者：

Su, WB ^{[1
]}

Chang, SH

Jian, WB

Chang, CS

Chen, LJ

Tsong, TT

机构：

[1] Acad Sinica, Inst Phys, Taipei, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[3] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.86.5116

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two-dimensional lead (Pb) islands of varying heights have been grown on the Si(111)-(7 x 7) surface at low temperature. Individual islands are investigated concurrently with real-space and local-probe scanning tunneling microscopy and spectroscopy. Quantum size effects, manifested in the formation of new electronic bound states, redistribution of surface charge density, and oscillatory relaxations in island thickness are found to be perfectly correlated to each other.

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页码：5116 / 5119

页数：4

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