THEORY OF THE QUANTUM SIZE EFFECT IN SIMPLE METALS

被引:77
作者
CIRACI, S [1 ]
BATRA, IP [1 ]
机构
[1] IBM CORP,RES LAB K33 281,SAN JOSE,CA 95193
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 06期
关键词
D O I
10.1103/PhysRevB.33.4294
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4294 / 4297
页数:4
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[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   MEASUREMENT OF OVERLAYER-PLASMON DISPERSION IN K-CHAINS ADSORBED ON SI(001)2X1 [J].
ARUGA, T ;
TOCHIHARA, H ;
MURATA, Y .
PHYSICAL REVIEW LETTERS, 1984, 53 (04) :372-375
[3]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[4]   IDEAL AL-GE(001) INTERFACE - FROM CHEMISORPTION TO METALLIZATION OF THE AL OVERLAYER [J].
BATRA, IP ;
CIRACI, S .
PHYSICAL REVIEW B, 1984, 29 (12) :6419-6424
[5]   A THEORETICAL-STUDY OF THE EPITAXIAL-GROWTH OF METAL OVERLAYERS ON SEMICONDUCTOR SURFACES [J].
BATRA, IP ;
CIRACI, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :427-432
[6]   METALLIZATION AND SCHOTTKY-BARRIER FORMATION [J].
BATRA, IP ;
CIRACI, S .
PHYSICAL REVIEW B, 1986, 33 (06) :4312-4314
[7]   LATTICE-RELAXATION IN ALUMINUM MONOLAYERS [J].
BATRA, IP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1603-1606
[8]   ELECTRONIC STATES OF IDEAL GE-AL INTERFACES [J].
BATRA, IP ;
HERMAN, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :1080-1084
[9]   ELECTRONIC-STRUCTURE OF OXYGEN OVERLAYER ON AL(100) [J].
BATRA, IP ;
CIRACI, S .
PHYSICAL REVIEW LETTERS, 1977, 39 (12) :774-777
[10]   ELECTRON LOCALIZATION AND SUPERCONDUCTIVITY IN VERY THIN EPITAXIALLY GROWN AG FILMS ON GE(001) [J].
BURNS, MJ ;
LINCE, JR ;
WILLIAMS, RS ;
CHAIKIN, PM .
SOLID STATE COMMUNICATIONS, 1984, 51 (11) :865-869